| PART |
Description |
Maker |
| MRFIC1859 |
Dual-Band GSM 3.6V Integrated RF Power Amplifier(GSM 3.6V集成式射频功
|
Motorola, Inc.
|
| MW5IC2030 |
GSM/GSM EDGE, W–CDMA, PHS 1930–1990 MHz, 30 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
|
Motorola
|
| Q68000-A9124 CGY94 |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CGY2014TT |
GSM/DCS/PCS power amplifier(GSM/DCS/PCS 功率放大
|
Philips Semiconductors
|
| THM1001TE |
SiGe HBT MMIC POWER AMPLIFIER
|
TACHYONICS[Tachyonics CO,. LTD]
|
| AWT6168 |
GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc.
|
| AWT6168 |
GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS[ANADIGICS, Inc]
|
| MRFIC1859 |
Dual Band / GSM 3.6V Integrated Power Amplifier
|
Motorola
|
| PCF5078 PCF5078T |
Power amplifier controller for GSM and PCN systems
|
NXP Semiconductors
|
| PF01412A PF01412 |
IC,RF AMPLIFIER,HYBRID,MODULE,8PIN,PLASTIC
From old datasheet system
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
Hitachi America
HITACHI[Hitachi Semiconductor]
|
| HSG2002 HSG2002TB-E |
SiGe HBT High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| TQM7138 |
3V HBT SiGe CDMA 4x4mm POWER AMPLIFIER MODULE
|
TRIQUINT[TriQuint Semiconductor]
|
